MTE720T

45,000.00125,000.00

Transcend’s M.2 2280 SSD MTE720T built with 112-layer 3D NAND flash memory, features a high-speed PCIe Gen 4 x4 interface, complies with the latest NVMe 1.4 specification, and has a built-in 8-lane controller for unprecedented transfer performance. Transcend MTE720T SSDs are equipped with built-in DRAM cache memory for excellent random access speeds, while featuring a 30μ” gold-fingered thick gold-plated PCB, corner bond technology, and anti-sulfur resistors to enhance the protection of critical components against harsh industrial environments. MTE720T has undergone rigorous in-house testing and has a wide temperature (-20°C~75°C), which can still operate stably under sudden temperature changes, demonstrating high reliability.

 

Transcend’s MTE720T-I SSDs with wide temperature characteristics can operate reliably from -40°C to 85°C to ensure stable operation in mission-intensive applications for superior performance, optimal endurance, and reliability.

 

Description

MTE720T

Transcend’s M.2 2280 SSD MTE720T built with 112-layer 3D NAND flash memory, features a high-speed PCIe Gen 4 x4 interface, complies with the latest NVMe 1.4 specification, and has a built-in 8-lane controller for unprecedented transfer performance. Transcend MTE720T SSDs are equipped with built-in DRAM cache memory for excellent random access speeds, while featuring a 30μ” gold-fingered thick gold-plated PCB, corner bond technology, and anti-sulfur resistors to enhance the protection of critical components against harsh industrial environments. MTE720T has undergone rigorous in-house testing and has a wide temperature (-20°C~75°C), which can still operate stably under sudden temperature changes, demonstrating high reliability.

Transcend’s MTE720T-I SSDs with wide temperature characteristics can operate reliably from -40°C to 85°C to ensure stable operation in mission-intensive applications for superior performance, optimal endurance, and reliability.

 

Product Technology

112-layer 3D flash memory

30μ” PCB Gold Finger

Edge reinforcement

Class wide temperature

Wide temperature technology

Dynamic thermal energy management mechanism

Temperature sensor

Read interference

Anti-sulfur technology

spam collection mechanism

Average erasure technique

TRIM

Fault block management

Power Protection (PS)

Move early


Firmware features

  • Supports NVM commands
  • Dynamic thermal energy management mechanism
  • Built-in LDPC ECC automatic error correction function
  • It supports region-wide average erasure and fault block management to increase reliability
  • Supports garbage collection mechanism
  • Supports S.M.A.R.T. monitoring function to perform device health monitoring, analysis, and reporting
  • TRIM command is supported
  • NCQ command is supported
  • AES advanced encryption standard for complete hard drive encryption at the hardware level (custom function)

Hardware features

  • RoHS 2.0 compliant
  • NVM Express 1.4 compliant
  • PCI Express 4.0 compliant
  • Compliant with the new generation M.2 specification (length: 80mm) for thin and light mobile devices
  • Equipped with PCIe Gen 4 x4 interface
  • Built-in DDR4 DRAM cache
  • Endurance is 3K P/E cycles
  • The entire range is equipped with Corner Bond technology to protect critical components
  • 30μ” gold finger thick gold plating process
  • Anti-sulfur resists the threat of sulfurization in the external environment
  • The Power Protection Mechanism (PS) ensures data transmission reliability and reduces the risk of data corruption within the SSD due to abnormal power outages
  • 包含類寬溫(-20°C ~ 75°C)與寬溫(-40°C ~ 85°C)規格,適合極端工控操作環境
  • 支援創見Scope Pro軟體

 


軟體解決方案

管理

Control Center

從邊緣到核心,即時遠端管理,全方位掌握

監控

Scope Pro

善用數據有效分析,事半功倍

救援

One Touch Recovery

堅固可靠的系統環境只需一鍵設定,即可搞定


Specifications

appearance

Size: 80 mm x 22 mm x 3.58 mm (3.15″ x 0.87″ x 0.14″)
weight 9 g (0.32 oz)
M.2 specification
  • 2280-D2-M (Double Sided Punch)
Appearance size
  • M.2 2280

interface

bus interface
  • NVMe PCIe Gen4 x4

storage

capacity
  • 512 GB/
  • 1 TB/
  • 2 TB/
  • 4 TB
Flash type
  • 112-layer 3D flash memory

operating environment

Operating voltage
  • 3.3V±5%
operating temperature
  • Class wide temperature

    -20°C (-4°F) ~ 75°C (167°F)

  • Wide temperature

    -40°C (-40°F) ~ 85°C (185°F)

Storage temperature -55°C (-67°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
Impact resistant
  • 15 G, 11 ms, 3 axis
Vibration resistant (in operation) 20 G (peak-to-peak), 7 Hz ~ 2000 Hz (frequency)

Battery

Power Consumption (Operating) 5.8 watts
Power Consumption (IDLE) 0.8 watts

Efficiency

Sequential Read and Write Speed (CrystalDiskMark) Read: Up to 7,500 MB/s
Write: Up to 6,700 MB/s
4K Random Read and Write Speed (IOmeter) Read: Up to 540,000 IOPS
Write: Up to 440,000 IOPS
Mean Time Between Failures (MTBF) 3,000,000 hours
Megabytes Written (TBW) Up to 5,920 TBW
Daily Full Disk Writes (DWPD) 1.35 (3 years)
Note
  • The transfer speed will vary depending on your system performance (hardware, software, usage, product capacity).
  • The amount of work used to evaluate DWPD values may differ from your actual operating environment (hardware, software, usage, product capacity).
  • The megabyte written (TBW) value is based on the highest capacity of the family.