MTE730P

51,450.00142,600.00

Transcend MTE730P M.2 22110 SSD is equipped with Power Loss Protection (PLP) technology, which provides continuous power to the controller and DRAM when the system is not powered, ensuring that data can be stored intact even when the power supply is unstable, achieving highly reliable storage performance.

 

MTE730P is built with 112-layer 3D NAND flash memory, equipped with an 8-channel controller and PCIe Gen 4 x4 high-speed interface, bringing unprecedented transfer performance. Transcend MTE730P SSD has a built-in DRAM cache that provides excellent random access speeds, while it is equipped with a 30μ” gold-fingered thick gold-plated PCB, corner bond technology, and anti-sulfur resistors to enhance the protection of critical components against harsh industrial applications. MTE730P has undergone rigorous in-house testing and has a wide temperature range (-40°C~85°C), which can operate stably even under sudden temperature changes, demonstrating high reliability.

Description

Transcend MTE730P M.2 22110 SSD is equipped with Power Loss Protection (PLP) technology, which provides continuous power to the controller and DRAM when the system is not powered, ensuring that data can be stored intact even when the power supply is unstable, achieving highly reliable storage performance.

MTE730P is built with 112-layer 3D NAND flash memory, equipped with an 8-channel controller and PCIe Gen 4 x4 high-speed interface, bringing unprecedented transfer performance. Transcend MTE730P SSD has a built-in DRAM cache that provides excellent random access speeds, while it is equipped with a 30μ” gold-fingered thick gold-plated PCB, corner bond technology, and anti-sulfur resistors to enhance the protection of critical components against harsh industrial applications. MTE730P has undergone rigorous in-house testing and has a wide temperature range (-40°C~85°C), which can operate stably even under sudden temperature changes, demonstrating high reliability.

 

Product Technology

112-layer 3D flash memory

30μ” PCB Gold Finger

Edge reinforcement

Wide temperature technology

Anti-sulfur technology

spam collection mechanism

Average erasure technique

Fault block management

Power Loss Protection (PLP)

Move early


Firmware features

  • Supports NVM commands
  • Dynamic thermal energy management mechanism
  • Built-in LDPC ECC automatic error correction function
  • It supports region-wide average erasure and fault block management to increase reliability
  • Supports garbage collection mechanism
  • Supports S.M.A.R.T. monitoring function to perform device health monitoring, analysis, and reporting
  • TRIM command is supported
  • NCQ command is supported

Hardware features

  • RoHS 2.0 compliant
  • NVM Express 1.4 compliant
  • PCI Express 4.0 compliant
  • Compliant with the new generation of M.2 specification (Length: 110mm), suitable for thin and light mobile devices
  • Equipped with PCIe Gen 4 x4 interface
  • Built-in DDR4 DRAM cache
  • Uses high-quality 3D NAND flash memory
  • Endurance is 3K P/E cycles
  • The entire range is equipped with Corner Bond technology to protect critical components
  • 30μ” gold finger thick gold plating process
  • Anti-sulfur resists the threat of sulfurization in the external environment
  • Power Loss Protection (PLP) function to avoid data loss due to accidental power outages
  • Supports operation in a wide temperature range (-40°C to 85°C).

 


Specifications

appearance

Size: 110 mm x 22 mm x 3.88 mm (4.33″ x 0.87″ x 0.15″)
weight 11 g (0.39 oz)
M.2 specification
  • 22110-D5-M
Appearance size
  • M.2 22110

interface

bus interface
  • NVMe PCIe Gen4 x4

storage

capacity
  • 512 GB/
  • 1 TB/
  • 2 TB/
  • 4 TB
Flash type
  • 112-layer 3D flash memory

operating environment

Operating voltage
  • 3.3V±5%
operating temperature
  • Wide temperature

    -40°C (-40°F) ~ 85°C (185°F)

Storage temperature -55°C (-67°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
Impact resistant
  • 15 G, 11 ms, 3 axis
Vibration resistant (in operation) 20 G (peak-to-peak), 7 Hz ~ 2,000 Hz (frequency)

Battery

Power Consumption (Operating) 6.2 watts
Power Consumption (IDLE) 0.8 watts

Efficiency

Sequential Read and Write Speed (CrystalDiskMark) Read: Up to 7,500 MB/s
Write: Up to 6,700 MB/s
4K Random Read and Write Speed (IOmeter) Read: Up to 540,000 IOPS
Write: Up to 440,000 IOPS
Mean Time Between Failures (MTBF) 3,000,000 hours
Megabytes Written (TBW) Up to 5,920 TBW
Daily Full Disk Writes (DWPD) 1.35 (3 years)
Note
  • The transfer speed will vary depending on your system performance (hardware, software, usage, product capacity).
  • The amount of work used to evaluate DWPD values may differ from your actual operating environment (hardware, software, usage, product capacity).
  • The megabyte written (TBW) value is based on the highest capacity of the family.